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2007 2nd International Workshop on Advances in Sensors and by Institute of Electrical and Electronics Engineers PDF

By Institute of Electrical and Electronics Engineers

ISBN-10: 1424412447

ISBN-13: 9781424412440

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Extra resources for 2007 2nd International Workshop on Advances in Sensors and Interface

Example text

14c, at large Vds the slope increases with Vg, which indicates that in this case the transport mechanism is not tunneling through the contact barrier, but rather is determined by the intrinsic properties of pentacene, which suggests that in the devices of the first group the metal electrode and the organic semiconductor form good contacts. For nanoscale pentacene transistors with non-ideal contacts, the overall transport is limited by the gate-modulated metal/organic semiconductor barrier, as described in Fig.

10. It is interesting and important to notice the converging point in Fig. 15 cm2/(V ⋅ s), corresponding to a zero hopping barrier at such a high field. This is also predicted by Frenkel-Poole’s model. Recalling that zero-field mobility μ0 in Eq. 11 The temperature dependence of field-dependent mobility. Each line represents the field-dependent mobility at a certain temperature (the mobility increases with increasing temperature), obtained from experimental data in the same way as the four straight dashed lines in Fig.

To study the scaling behavior, the apparent contribution of the device geometry was filtered out by taking the current density vs. longitudinal field and plotting that relation for various channel lengths at four different temperatures, under a certain high gate bias beyond the threshold voltage of the transistors (−40 V). The solid lines in these plots are the ohmic channel transport currents at Vg = −40 V calculated through the drain-current equation for linear-region operation of transistors, based on the mobility values extracted from the measurement data taken at the corresponding temperature on the long-channel (5 μm) devices where field dependence of the mobility is not significant at its operative longitudinal field and the channel resistance is much larger than contact resistance.

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2007 2nd International Workshop on Advances in Sensors and Interface by Institute of Electrical and Electronics Engineers


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